Document Number: 89184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Feb-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF
= 0.54 V at I
F
= 5 A
V60200PGW
Vishay General Semiconductor
New Product
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder dip 275 °C max. 10 s, per JESD 22-B106
? Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
?
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94
V-0 flammabi
lity rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
200 V
IFSM
300 A
EAS
at L = 60 mH 150 mJ
VF at IF
= 30 A 0.77 V
TJ
max. 150 °C
TO-3PW
TMBS?
PIN 2
CASE
PIN 1
PIN 3
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V60200PGW UNIT
Maximum repetitive peak reverse voltage VRRM
200 V
Maximum average forward rectified curret (fig. 1)
per device
I
per diode 30F(AV)
60
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
300 A
Non-repetitive avalanche energy at TJ
= 25 °C, L = 60 mH per diode E
AS
150 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
TJ
= 38 °C ± 2 °C per diode
IRRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 40 to + 150 °C
相关PDF资料
V80100PW-M3/4W DIODE SCHTKY DUAL 100V 40A TO3PW
VB20200C-E3/8W DIODE 20A 200V DUAL SCHOTTKY
VB20200G-E3/8W DIODE 20A 200V DUAL SCHOTTKY
VBT1045CBP-E3/8W DIODE SCHOTTKY 5A 45V
VBT2045CBP-E3/8W DIODE SCHOTTKY 10A 45V
VBT3045CBP-E3/8W DIODE SCHOTTKY 15A 45V
VBT6045CBP-E3/8W DIODE SCHOTTKY 30A 45V
VFT1045CBP-M3/4W DIODE SCHOTTKY 5A 45V
相关代理商/技术参数
V60200PGW-M3-4W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V6027XN 制造商:TDK-Lambda Corporation 功能描述:QUOTE S230298
V602AS32 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:High Energy Metal-Oxide Arrester Blocks
V602AS42 制造商:未知厂家 制造商全称:未知厂家 功能描述:
V602ME04 制造商:ZCOMM 制造商全称:ZCOMM 功能描述:LOW COST - HIGH PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR
V602ME04_10 制造商:ZCOMM 制造商全称:ZCOMM 功能描述:Voltage-Controlled Oscillator Surface Mount Module
V602ME06 制造商:ZCOMM 制造商全称:ZCOMM 功能描述:VOLTAGE CONTROLLED OSCILLATOR
V602ME06-LF 制造商:ZCOMM 制造商全称:ZCOMM 功能描述:Voltage-Controlled Oscillator Surface Mount Module